Download Advanced MOS Device Physics by Norman G. Einspruch PDF

By Norman G. Einspruch

Contains contributions from a dozen execs from the inner most area and academia. Discusses numerous machine physics issues of specific curiosity to and college researchers in electric engineering, desktop technology, and digital fabrics. Emphasizes actual description, mode

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Boothroyd, A simple two-dimensional model for IGFET operation in the saturation region. IEEE Trans. Electron Devices ED-24(3), 254-262 (1977). 1. Approaches to Scaling 42. 43. 44. 45. 46. 47. 48. 49. 50. 51. 52. 53. 37 P. K. Ko, R. S. Muller, and C. Hu, A unified model for hot-electron currents in MOSFETs. Tech. —Int. Electron Devices Meet, p. 600 (1981). P. K. Ko, Hot-electron effects in MOSFET. Doctoral Thesis, University of California, Berkeley (1982). S. Tarn, P. K. Ko, C. Hu, and R. S. Muller, Correlation between substrate and gate currents in MOSFETs.

Talkhan, I. R. Manour, and A. I. Barboor, Investigation of the effect of drift-fielddependent mobility on MOSFET characteristics. Parts I and II. IEEE Trans. Electron Devices ED-19(8), 899-916 (1972). 32. C. G. Sodini, P. K. Ko, and J. L. Moll, The effect of high fields on MOS device and circuit performance. IEEE Trans. Electron Devices ED-31(10), 1386 (1984). 33. M. C. Jeng, J. Chung, A. Wu, J. Moon, T. Y. Chan, G. May, P. K. Ko, and C. Hu, Performance and reliability of deep-submicron M O S F E T s .

Polysilicon is then deposited, d o p e d and patterned using reactive ion etching to form the transistor gates a n d also the first level of interconnect. The s o u r c e / d r a i n arsenic implant is now performed. N o masking is needed at this stage since the polysilicon gates and thick field oxide serve to prevent penetration of the arsenic to the silicon everywhere except in the source and drain areas. The photoresist layer used to define the gates is sometimes left in place during this implant in order to ensure that arsenic channeling through the polysilicon does not occur.

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